Abstract
Previous studies have reported the existence of a 1.9 eV photoluminescence (PL) band in silica glass exposed to visible and ultraviolet light. Nonbridging oxygen hole centers (O3≡Si–O↑,↑: unpaired electron) were thought to be the origin of this PL band. In this article, we describe the characteristics of a 1.9 eV PL band in silica glass (excited by visible and ultraviolet light). At low temperature (∼20 K), we observed broadening of the full width at half maximum and a peak shift for this PL band. We propose that the change of peak energy and full width at half maximum for the 1.9 eV PL band at low temperature was really caused by the existence of another peak rather than by structural changes in the local network structure.
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