Abstract
Highly n-doped silicon nanowires (SiNWs) exhibit excellent hydrogen generation. Our results indicate three hydrogen generation possibilities, i.e. SiNWs oxidation, photocatalysis and the cleavage of dangling H bonds, are jointly responsible for the efficient hydrogen generation. Oxidation accounts for about 80% of total hydrogen, photocatalysis contributes less than 20% of total hydrogen, and about 0.1% of total hydrogen is from cleavage of dangling H bonds. SiNWs were oxidized in water and form SiOx (0 < X < 2) thin layer. Furthermore, the ratio of photo-generated hydrogen to photo-generated oxygen is about 2.4:1. It suggests that photocatalysis appears to be a process of water splitting. This study is significant to reveal the mechanism of hydrogen production on SiNWs prepared by Metal-Assisted Wet Chemical Etching (MAWC).
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
