Abstract
A nanoscale analysis of MOSFET switching loss is presented. A new analytical method based on drift diffusive and quantum transport principles with a non-equilibrium Green's function method is proposed. For the first time, the switching energy in a MOSFET is expressed as a function of the dc bias, operating frequency, dimensions, doping concentration and contact materials. The results provide a remarkable insight into the choice of geometries and materials for transistor designers.
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