Abstract
The moving photocarrier grating (MPG) technique for the determination of the carrier mobilities and the recombination lifetime of <TEX>$\alpha$</TEX>-Se:As films has been studied. The electron and hole drift mobility and the recombination lifetime of <TEX>$\alpha$</TEX>-Se films with arsenic (As) additions have been obtained from measurement of the short circuit current density <TEX>$j_{sc}$</TEX> as a function of grating velocity and spatial period. The hole mobility decreases due to defect density of hole traps when x exceeds 0.003, whereas the hole mobility increases for the case of low As addition (x<TEX>$\le$</TEX>0.003). We have found an increase in hole drift mobility and recombination lifetime, especially when As with (x = 0.003) is added into the <TEX>$\alpha$</TEX>-Se film.
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