Abstract
Applying the moving photo-carrier grating(MPG) technique and time-of-flight(TOF) measurements, we studied the transport properties of stabilized amorphous selenium typical of the material used in direct conversion X-ray imaging devices. For MPG measurement, we obtained electron and hole mobility and the recombination lifetime of <TEX>$\alpha-Se$</TEX> films with arsenic(As) additions. We found an apparent increase in hole drift mobility and recombination lifetime, especially when 0.3 % As was added into <TEX>$\alpha-Se$</TEX> film, whereas electron mobility decreased with the addition of As due to the defect density. For TOF measurement, a laser beam with pulse duration of 5 ns and wavelength of 350 nm was illuminated on the surface of <TEX>$\alpha-Se$</TEX> with a thickness of 400 <TEX>${\mu}m$</TEX>. The measured hole and electron transit times were about 8.73 <TEX>${\mu}s$</TEX> and 229.17 <TEX>${\mu}s$</TEX>, respectively.
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