The morphology of InP/InGaAs grown by molecular beam epitaxy onto V-grooved InP substrates

Abstract

Gas source molecular beam epitaxial growths have been performed onto V-groove patterned InP substrates with (1 1 1)A and (1 1 1)B faceted sidewalls in order to investigate the dependence of epilayer morphology of InP/InGaAs quantum well structures on the growth conditions. It is found that the V/III flux ratio significantly affects the shape and roughness of a V-groove bottom and the roughness of the sidewall. The growth temperature and growth rate also affect the morphology. With the growth conditions optimized, InP/InGaAs quantum well structures can be grown in the grooves with sharp bottoms and smooth surfaces. The sharpness of the bottom of the groove is related to growth conditions that decrease the growth rate at the bottom by limiting the supply of the group V component.