Abstract
The modified alpha power law based model of statistical fluctuation in drain current of an unconventional Metal Oxide Semiconductor Field Effect Transistor namely Floating-Gate Metal Oxide Semicond...
Highlights
The Floating-Gate Metal Oxide Semiconductor Field Effect Transistors or FGMOSFETs have been widely used in various analog and digital circuits because of their manufacturability in the standard nanometer Complementary Metal Oxide Semiconductor (CMOS) technology (Cao et al, 2012; Ramasubramanian, 2007; Saha, 2007, 2008, 2012; Schinke, Di Spigna, Shiveshwarkar, & Franzon, 2011)
Both previous models proposed by Banchuin (2015) and Banchuin and Chaisricharoen (2017) have focused on the gross value of fluctuation in ID which does not show the true criticality of such fluctuation. This is because the fluctuation in ID may not be critical despite its large gross value if the ideal non fluctuated value of ID is very large and vice versa. Motivated by these problems and the applicability to FGMOSFET based circuits of the nanometer CMOS technology, the analytical model of process induced statistical fluctuation in ID of nanometer FGMOSFET has been proposed in this research by using the per-unit approach which has been adopted in the previous studies on statistical fluctuation in ID of both MOSFET (Hasegawa et al, 2011) and FGMOSFET (Banchuin, 2016)
The modified alpha power law based analytical model of statistical fluctuation in ID of nanometer FGMOSFET has been proposed in a per-unit basis
Summary
The Floating-Gate Metal Oxide Semiconductor Field Effect Transistors or FGMOSFETs have been widely used in various analog and digital circuits because of their manufacturability in the standard nanometer Complementary Metal Oxide Semiconductor (CMOS) technology (Cao et al, 2012; Ramasubramanian, 2007; Saha, 2007, 2008, 2012; Schinke, Di Spigna, Shiveshwarkar, & Franzon, 2011). This is because the fluctuation in ID may not be critical despite its large gross value if the ideal non fluctuated value of ID is very large and vice versa Motivated by these problems and the applicability to FGMOSFET based circuits of the nanometer CMOS technology, the analytical model of process induced statistical fluctuation in ID of nanometer FGMOSFET has been proposed in this research by using the per-unit approach which has been adopted in the previous studies on statistical fluctuation in ID of both MOSFET (Hasegawa et al, 2011) and FGMOSFET (Banchuin, 2016). In the subsequent section the basic operating principle of the FGMOSFET and the modified alpha power law will be subsequently summarized
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