Abstract

We study the electronic and optical properties of bulk MoS2 and MoSO systems using the plane-wave method within the generalized gradient approximation. The structural properties show that the O substitution at S sites tunes the z-axis Wyckoff positions of all atoms and the bond angles. The electronic band structures show that the substitution tunes the conduction band minimum at 0.8 Σ to M and significantly promotes more localized valence states compared to that of MoS2 system. The localization, mainly applying to Mo 4d and S 3p states, is more pronounced above −4 eV. Below −4 eV, O 2p states are dominant indicating that they are more stable than S 3p states. However, the substitution slightly increases the indirect and direct (K → K) bandgap of MoS2 system. From the optical properties, both systems show the strong optical dichroism. By means of the substitution, the σ1 width significantly enhances, while the plasmonic-state energy levels decrease. Our result emphasizes that the O substitution significantly tunes the electronic and optical properties of bulk MoS2 system.

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