The Modeling of Platinum Diffusion in Silicon under Non‐equilibrium Conditions

Abstract

The diffusion of platinum in silicon is described by the kick‐out and by the dissociative mechanism. The resulting set of four coupled differential equations is solved numerically without any simplification. The authors find that the concentration of substitutional platinum is strongly influenced by the initial concentration of vacancies. As a result of their work, they suggest a complete set of parameters which describes the diffusion of platinum in silicon in the temperature range from 700 to 950°C. The dissociative mechanism dominates below 850°C and the kick‐out mechanism above 900°C. The reaction constant for the dissociative mechanism can be estimated to be , whereas the reaction constant of the kick‐out mechanism is of the order of at 700°C. Platinum diffusion below 850°C is suggested as a means of measuring vacancy distributions in silicon.