Abstract
High-mobility indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) are achieved through low-temperature crystallization enabled via a reaction with a transition metal catalytic layer. For conventional amorphous IGZO TFTs, the active layer crystallizes at thermal annealing temperatures of 600 °C or higher, which is not suitable for displays using a glass substrate. The crystallization temperature is reduced when in contact with a Ta layer, where partial crystallization at the IGZO back-channel occurs with annealing at 300 °C, while complete crystallization of the active layer occurs at 400 °C. The field-effect mobility is significantly boosted to 54.0 cm2/V·s for the IGZO device with a metal-induced polycrystalline channel formed at 300 °C compared to 18.1 cm2/V·s for an amorphous IGZO TFT without a catalytic layer. This work proposes a facile and effective route to enhance device performance by crystallizing the IGZO layer with standard annealing temperatures, without the introduction of expensive laser irradiation processes.
Highlights
High-mobility indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) are achieved through low-temperature crystallization enabled via a reaction with a transition metal catalytic layer
The effects of the Ta catalytic layer and annealing temperature on the crystallographic nature of IGZO films are examined in detail
At a higher annealing temperature of 700 °C, the X-ray diffraction (XRD) spectrum shows a discernible (009) diffraction peak. This indicates that the IGZO layer has crystallized, which agrees with previous reports in the literature[34]
Summary
High-mobility indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) are achieved through low-temperature crystallization enabled via a reaction with a transition metal catalytic layer. For conventional amorphous IGZO TFTs, the active layer crystallizes at thermal annealing temperatures of 600 °C or higher, which is not suitable for displays using a glass substrate. This work proposes a facile and effective route to enhance device performance by crystallizing the IGZO layer with standard annealing temperatures, without the introduction of expensive laser irradiation processes. Amorphous metal oxide semiconductor thin-film transistors (TFTs) are used as the backplane electronics in liquid crystal displays (LCDs) and organic light-emitting diode (OLED) displays, for their field-effect mobility >10 cm2/V·s, good uniformity over large glass substrates sizes, and low temperature process[1,2,3,4]. The implementation of innovative TFT structures and processes into current technology to boost the device performance of the industry-standard InGaZnO would be economically beneficial
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