Abstract
The mixed layer problem and vanishing Debye length limit (space charge neutral limit) of the bipolar time-dependent drift-diffusion model for semiconductors with p-n junctions are studied in one space dimension. For the general sign-changing doping profile and the general initial data, the quasi-neutral limit is proven rigorously by constructing a more accurate approximate solution by taking into account the effects of the initial layer, the boundary layer, and an extra mixed layer mixing of the fast time and fast space scales, and by using an elaborate energy method.
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