Abstract
A methodology for the application of two-dimensional (2-D) device simulation to electrostatic discharge (ESD) events is presented. Correlation of ESD simulation results with experimental data is illustrated using a grounded base n-p-n transistor. It is shown that device simulation is essential for understanding complex ESD failure mechanisms. The application of the methodology to the design of a new ESD protection structure, the mirrored lateral silicon controlled rectifier (MILSCR), is then discussed. Experimental results show that the MILSCR provides a very efficient double-polarity ESD protection. Finally, device simulation is used to optimize this structure for smart-power applications. In particular, holding currents as high as 134 mA are achieved, allowing one to cope with the latchup danger during normal operation.
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