Abstract

Effects of A-site nonstoichiometry on 3at% Ni-doped Na0.5Bi0.5TiO3 thin film were investigated. The influence of Na deficiency and Bi excess on the microstructure and electrical properties for the films were determined in comparison to the stoichiometric sample. The polycrystalline perovskite structure can be maintained at all compositions without secondary phase. Compared with the stoichiometric film, either Na deficiency or Bi excess can result in a decreased grain size. The enhanced insulating characteristic, ferroelectric and dielectric properties can be obtained in the Na or Bi nonstoichiometric thin films. Especially, the Na0.5Bi0.5(1+0.08)Ti0.97Ni0.03O3 thin film exhibits larger remanent polarization (Pr) of 22.3 μC/cm2 and dielectric tunability of 24.4%. These results show that Na deficiency or Bi excess lead to improved electrical performances for Na0.5Bi0.5TiO3-based thin films to some extent, rendering it suitable for ferroelectric and dielectric applications.

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