Abstract
We have investigated two types of Zn1-xCdxSe quantum islands in CdSe/ZnSe heterostructure with different size and Cd composition using micro-photoluminescence and micro-Raman spectroscopy. The micro-photoluminescence spectra at 4.2 K indicate that the photoluminescence peaks of the islands have a large red-shift of 166 meV when the thickness of CdSe deposition layer increased from 1.8 ML to 2.3 ML, which can't be explained by considering the change of quantum confinement potential only. We also found two other important mechanisms which may lead to the large red-shift by comparing the micro-photoluminescence and micro-Raman spectra. First, the sheet density of large Zn1-xCdxSe islands which have lower exciton ground state energy will increase and the large islands will dominant gradually the photoluminescence properties of the samples with increasing thickness of the CdSe layer. Second, the increase of Cd composition in the Zn1-xCdxSe quantum islands contributes to the large red-shift as well. This is verified by resonant Raman scattering spectra of the samples.
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