Abstract
We report on the use of scanning force microscopy as a versatile tool for the electrical characterization of nanoscale memristors fabricated on ultrathin La0.7Sr0.3MnO3 (LSMO) films. Combining conventional conductive imaging and nanoscale lithography, reversible switching between low-resistive (ON) and high-resistive (OFF) states was locally achieved by applying voltages within the range of a few volts. Retention times of several months were tested for both ON and OFF states. Spectroscopy modes were used to investigate the I–V characteristics of the different resistive states. This permitted the correlation of device rectification (reset) with the voltage employed to induce each particular state. Analytical simulations by using a nonlinear dopant drift within a memristor device explain the experimental I–V bipolar cycles.
Highlights
The current knowledge-based society requires a new, morepowerful memory technology for the development of any field concerning human activity, such as biomedicine, space research, meteorological predictions, simulation in basic research science, and entertainment
In this work we have shown the full capabilities of electrical scanning probe microscopy modes to modify and characterize memristive LSMO thin films on the nanoscale
We have proposed a nanoscale methodology to fabricate and characterize durable memristors using the tip of the C-Scanning force microscopy (SFM) as a movable top electrode, as an alternative to standard two-plate devices
Summary
The current knowledge-based society requires a new, morepowerful memory technology for the development of any field concerning human activity, such as biomedicine, space research, meteorological predictions, simulation in basic research science, and entertainment. In this work we have combined conductive scanning force microscopy imaging and single-point current–voltage spectroscopy, with more advanced spectroscopy measurements (3-D modes) to characterize the nanoscale electrical response of thin films presenting memristive behaviour.
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