Abstract
Laser‐induced vertical links between two metallization levels have provided the restructurable very large scale integrated approach to wafer‐scale integration. In this process, interlevel insulation is reacted with molten metallic puddles formed by the application of suitable laser pulses. As a result, the insulating film is locally damaged, and the effected region becomes conductive, thus altering the signal path as desired. We discuss briefly the essential features of laser‐beam application to a conductive film in contact with an insulating substrate. Of particular interest is the molten zone that forms at appropriate laser‐beam and substrate conditions. We show how thermochemical effects result in low ohmic resistance connections in silicon nitride‐based link structure. The understanding gained in this case led to a new possible link structure. Silicon dioxide‐based links have been examined. In addition to electrical measurements, Auger electron spectroscopy, x‐ray photoelectron spectroscopy, and scanning electron microscopy have been used to examine various properties of the vertical links.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
