Abstract
The behavior of the oxygen-containing precipitate in silicon wafer on different stages of the getter formation process is considered from the mechanical point of view. The precipitate is modeled as a spheroidal inclusion undergoing inelastic eigenstrains in an anisotropic silicon matrix. The stress-strain state in the precipitate and matrix is calculated within the framework of the model. An energetic criterion of breaking the spherical shape by the coherent precipitates is obtained and analyzed. Criteria of the formation and onset of motion of the dislocation loops in the vicinity of the precipitate are also proposed. The obtained results are compared with the available experimental data.
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