Abstract
The atomic absorption technique has been used to detect trace impurity contamination in silicon wafers at different stages of processing. Suitable wafer etching by quantitative silicon removal followed by impurity concentration made it possible to reach significant detection limits for all the interesting contaminants, including Fe, Cr, Cu, Ni, K, Zn, Co, Mn, each present at levels below 10 12 atoms/cm 2. The number of contaminant species can be further increased and the detection limits improved. The extent to which correlations are possible with other less direct methods is discussed.
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