Abstract
The determination of the surface recombination velocity on a silicon filament by measurement of the spectral distribution of the photoconductivity is described. Results are presented indicating surface recombination velocities on etched surfaces of less than 75 cm sec-1 in dry oxygen, and greater than 7500 cm sec-1 in wet nitrogen. The measurements indicate that the surface recombination velocity may be a function of the carrier concentration at the surface.
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