Calculation of surface generation and recombination velocities at the Si-SiO2 interface

Abstract

Using deep level transient spectroscopy in the current transient mode, the interface trap density and electron and hole capture cross sections have been measured for thermally oxidized 〈100〉 silicon. We have compared oxides grown with and without HCl in the growth ambient, and also investigated the effect of the postoxidation inert ambient anneal. Values of the depleted surface generation velocity and surface recombination velocities in low- and high-level injection were then calculated from the measured interface trap parameters using Shockley–Read–Hall theory. We report here the results of the calculations and compare them with a few direct experimental measurements.