Abstract
According to characteristics of temperature dependence of the forward voltage of silicon diode with a constant current supply the manufacture of the planar silicon transistor base-collector junction diode as cryogenic thermometers was carried out in Xi'an. The results of its performance tests at temperatures down to 1.6K are reported. By using it as a temperature sensor in a cryogenic temperature controlling system the precision of controlled temperatures is improved from 0.5 K to 0.01 K. The constructed temperature auto-controlling system could use a variety of types of thermometers as its temperature sensor with a signal output at voltage level of 0 – 3.2 v.
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