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Abstract
The transverse magnetoresistance Delta rho / rho 0 and the Hall coefficient RH of aluminium containing Si impurities has been measured at 4.2 K as a function of solute concentration. These simultaneous low-field magnetoresistance and Hall coefficient measurements permitted to determine the anisotropy of the electronic scattering in terms of the mean free path ratios l++/l- and l--/l-.
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