Abstract
The transverse magnetoresistivity δϱ/ϱ0 and the low-field Hall coefficient R 0 were measured in aluminum containing dilutely concentrated Cu impurities. It is found that the low-field Hall coefficient R 0 is positive, in contrast to the isotropic value, which is negative. The large and positive values of R 0 are due to the conduction electrons of aluminum that suffer an anisotropic scattering on the copper impurities. The simultaneous low-field magnetoresistance and Hall coefficient measurements, combined with the simple equations derived by Kesternich, permitted us to determine the anisotropy of the electronic scattering in terms of the mean free path ratios 1 ++/1 − and 1 −−/1 −.
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