Abstract
The performances and reliability of the NMOS power cells for power amplifiers (PA) were proposed. The performances of power cells with different layout geometries have been compared. The drain current degradation of the NMOS transistors due to hot-carrier effect and high RF power stresses induced by the load impedance mismatches was also present in this work. The load mismatch factors at fundamental, second-order, and third-order frequencies were analyzed to quantify the power mismatch. The cells were fabricated by a 0.18 μm CMOS process. All of the characteristics of the devices were measured at 5.2 GHz.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.