Abstract
The large photogalvanic effect photocurrent is desirable in noncentrosymmetric materials, which may promote practical applications in optoelectronic devices. Here, based on the quantum transport simulations, we propose that the maximum photocurrent of recent attractive Te-based optoelectronic devices can be increased close to 20 times by adsorbing hydroxide ions at the two most stable sites (Te-C and Te-T sites) under the irradiation of the linearly polarized light. Moreover, we also analyze the photon energy of electron transition corresponding to the maximum photocurrent by the transmission spectrum of the devices. Additionally, the calculated extinction ratio of the adsorbed devices representing the polarization sensitivity can be reached to the maximum of about 169.7. Therefore, our results provide a feasible method for improving the photoresponse with the high polarization sensitivity of Te-base devices.
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