The kinetics of silicon dioxide chemical vapour deposition III: Experimental verification of the model

Abstract

In this paper a general analysis of chemical vapour deposition of silicon dioxide by oxidizing silane with oxygen is presented. In Part II a mathematical model of the process was presented. The proposed model is based on the scheme of surface reactions described in Part I. The non-linear equation describing the process obtained contains unknown coefficients. In this paper these coefficients are computed by fitting the model to the experimental data. With regard to the non-linearity of the model, the Marquardt method of non-linear regression is applied for this purpose. The verification of the model comprises verification of the physical and statistical significance of computed coefficients and comparison of the experimental and computed deposition rates. It is found that very good consistence is achieved. The influences of reagent concentrations and temperature on the process kinetics are analyzed. It is established that the key parameter determining the type of control of the process kinetics is the oxygen to silane ratio.