Abstract
This paper presents a general analysis of chemical vapour deposition (CVD) of silicon dioxide by oxidizing silane with oxygen. The proposed model is based on the scheme of surface reactions described in Part I. The model considers all the important process steps, namely mass transport in the gas phase, adsorption and chemical reactions. The proposed approach makes it possible to analyse the kinetics of the process for a wide range of parameters. However, the resulting equation is complicated and includes some unknown coefficients. In a Part III these coefficients will be determined by fitting the model to the experimental data and the experimental verification of the model will be presented.
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