Abstract
The dependence of the junction depth on various parameters in a concentration-dependent diffusion is considered. The result is applicable to any diffusion in which the diffusion coefficient is expressible in terms of the ratio of the concentration to the surface concentration, and decreases at low concentrations. In particular, the process of interstitial-substitutional diffusion is investigated. The derived expression of the junction depth is compared and found in agreement with the experimental results of zinc diffusion in some III–V compound semiconductors. This result enables one to predict the junction depth under various experimental conditions. It also supports an interstitial-substitutional mechanism for zinc diffusion in all the semiconductors under consideration.
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