Abstract
The microstructure of epitaxially grown garnets, used for magnetic bubble memory devices, has been examined prior and subsequent to implantation with high-energy ions by transmission electron microscopy, incorporating a special cross-section technique. In this particular investigation, thin films of (SmYGdTm) 3 Ga 0.4Fe 4.6O 12 have been produced by liquid phase epitaxy on (111) substrates of gadolinium gallium garnet and subsequently exposed to various doses of oxygen and/or deuterium ions. At moderate implantation doses (5×10 15 D + 2 cm 2 and/or 1×10 14 O + cm 2 ), magnetic properties are favo larger doses, isolated amorphous regions nucleate and grow into a continuous layer, thereby degrading desirable magnetic properties. Implantation-induced changes of the garnet crystal structure near the unimplanted/implanted boundary are described. Relationships between these microstructural features and concomitant magnetic properties are suggested.
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