Measurement of implantation profiles in garnet by transmission electron microscopy

Abstract

Thin films of (SmYGdTm) <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> Ga <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.4</inf> Fe <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4.6</inf> O <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">12</inf> have been produced by liquid phase epitaxy on {111} substrates of gadolinium-gallium garnet, masked with parallel stripes of photoresist, and implanted with ions of deuterium at 88 keV and doses ranging from 3.5 to 5.5 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">16</sup> D+ <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> /cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and/or with ions of oxygen at 100 keV and doses ranging from 0.95 to 8.6 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">14</sup> O+/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . These films are subsequently examined by transmission electron microscopy (TEM), incorporating a special cross-section technique, in order to reveal depth penetration (range) in unmasked regions and lateral diffuseness at mask edges for both D+ <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> and O+, thus providing a direct quantitative measure of implantation profiles. Shape and evolution of these profiles are determined as a function of implantation dose and compared with predicted stress-induced magnetic anisotropy within the implanted zone.