The ionisation process of α particles in mesoscopic structures: simulation by Monte Carlo method

Abstract

A first principle based quasi-deterministic 3D particle dynamics Monte Carlo simulation method was developed for examining mesoscopic (subhalf micron) Si electron devices. Applying a novel method for calculating the field and potential distributions, the real trajectories of the carriers are exactly followed. Consequently, an important feature of this method is that all Coulomb scatterings are inherently taken into account. A description of the physical background, the models and the simulation principle is given. The boundary conditions and a deterministic model for Auger recombination is also presented. Finally a simulation example is described: the evaluation of a dense hole-electron plasma induced by an α particle, passing through a reverse biased pn-junction. In connection with this example we also detail the model applied for the carrier generation induced by α particles penetrating the device.