Abstract

The research on the hydrogen passivation process for silicon solar cells has been developed for a long time. Recently, researchers have investigated the use of lasers as light sources. It has been found that hydrogen passivation technology can improve the minority carrier lifetime and passivate some impurities and defects in silicon solar cells. In this paper, a hydrogenation platform for silicon solar cells based on high intensity infrared LEDs of 940 nm was built. After a number of comparative experiments, electrical characteristics, photo-luminescence images, and light beam induced current were applied before and after hydrogenation to distinguish the passivation effect. It was found that the effect of hydrogen passivation on monocrystalline boron-doped passivated emitter and rear contact (PERC) solar cells by using infrared LEDs as the light source was satisfactory under the condition of suitable light intensity and temperature. It has a remarkable effect on improving the electrical characteristics and increasing the efficiency of monocrystalline boron-doped PERC solar cells based on high intensity infrared LEDs of 940 nm.

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