Abstract
Thin Zr-doped lanthanum niobium oxide (LaNb 1-x Zr x O 4 ) films were formed on the optical quartz (SiO 2 ) substrates using magnetron sputtering technique. Formed LaNb 1-x Zr x O 4 thin films were characterized using different techniques: X-ray diffraction (XRD), scanning electron microscope (SEM) and impedance spectroscopy. Electrical parameters of LaNb 1-x Zr x O 4 thin ceramic were investigated in the frequency range from 0.1 Hz to 1.0 MHz in temperature range from 773 to 1173 K. It was determined that LaNb 1-x Zr x O 4 thin ceramic films have the tetragonal structure and non-Debye type of relaxation. The activation energy was estimated from the relaxation time of impedance, electric modulus and conductivity resulting the activation energies vary from 1.12 ± 1 eV (Zr 1.99at.%), to 1.24 eV±1 eV (Zr 0.62at.%). DOI: http://dx.doi.org/10.5755/j01.ms.21.3.9535
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
