Abstract
The diffusion of phosphorus from neutron-activated, doped silicon source wafers into silicon test-wafers was investigated as a function of the doping concentration of the source wafers, the diffusion temperature, and the time. From a comparison between tracer and conductivity measurements, it follows that, for the experimental source concentrations, all the phosphorus was ionized. Autoradiographs made in conjunction with concentration profiles show that the diffusion took place uniformly without diffusion channels. The diffusion-masking characteristics of SiO2 and Si3N4 were examined under the same conditions and verified by autoradiographs and infrared transmission photographs.
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