Abstract
In this study, we prepared lead zirconate titanate (PZT) thin film with buffer layer by sol-gel method to investigate the role of interface composition on the ferroelectric behavior of PZT thin film. About 50-nm-thick PZT buffer layer containing various amount of excess Pb was served as an interfacial layer. After drying the buffer layer, about 200 nm thick PZT film containing 15% excess Pb was over-deposited. According to the increase of excess Pb content for the interfacial PZT layer, an integral PZT film showed an improvement of crystalline quality and negligible polarization fatigue behavior even after repeated 109 cycles in Pt/PZT/Pt structure. Therefore, we could believe that compositional and crystalline state of PZT buffer layer contacting Pt substrate has an important role on the entire film properties.
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