Abstract
The occurrence and nature of microdefects in silicon single crystals have been studied by means of lithium decoration in combination with x-ray transmission topography, ir transmission microscopy, and electrical resistivity measurements. The silicon crystals used were grown with the floating-zone or the pedestal-pulling method and contained different types of lattice defects. The Li diffusions were carried out at 400<TD<730°C. Due to precipitation the Li-donor concentration decreased exponentially with time during annealing. The number of nucleation sites was calculated with the aid of Ham's theory. For TD=400°C precipitation took place exclusively on grown-in lattice defects, such as dislocations and vacancy clusters. At TD=500°C vacancy-oxygen complexes of type (V-30) were formed in a striated distribution, which acted as nucleation sites for Li. These complexes are not formed in crystals doped with hydrogen. For TD≥550°C the precipitation process is dominated by Li precipitation on V-O pairs (A centers).
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