Abstract
In this work, high quality Cd1−xZnxTe films were prepared on fluorine doped tin oxide (FTO) glass substrates by close-spaced sublimation (CSS) method. A low resistivity sputtered Ga-doped ZnO (GZO) film was used as an interlayer between Au electrodes and Cd1−xZnxTe films try to reduce the contact resistance and contribute to bring about a better Ohmic contact. Circular transmission line model (CTLM) was adopted to investigate the effects of GZO intermediate layer on the contact properties of Au/GZO/Cd1−xZnxTe structure. The results show a low contact resistivity of 0.37Ωcm2 for Au/GZO contacts on Cd1−xZnxTe films. Cd1−xZnxTe film radiation detectors were also fabricated using Au/GZO contacts and an energy resolution of about 28% was obtained from a 60KeV 241Am γ-ray source for the first time.
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