Abstract
Current doubling effects in the photoanodic reactions of or on n‐type semiconductor electrodes (, , and ) and the photocathodic reaction of on a p‐type semiconductor were studied by the measurement of the temperature change of a semiconductor electrode surface. The results of the temperature change measurements show that these photoelectrode reactions proceed with quantum efficiencies greater than 1 but less than 2. The temperature changes are interpreted in terms of the current doubling process.
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