Abstract
An analysis on the kinetical processes during the epitaxial growth of garnet films is presented. On the rough {111} garnet faces the transport process consists of the diffusion of growth units through the mass transfer boundary layer and the interfacial process; both processes have about the same mass transfer resistance. On the flat {110} faces the model of Gilmer, Ghez and Cabrera (GGC) was applicable. With help of growth rate measurements on garnet films grown on spherically shaped gandolinium garnet substrates, we were able to estimate the parameters which determine the growth process. The values of the transport process parameters of the GGC model were Λ = 80 μm, λ = 70 nm and Λ s = 225 nm. For low misorientations, misorientation angle ζ<0.3°, the steps do not interact and the surface process is rate determining. For increasing misorientations ( ζ>0.6°), the step interaction increases and also the volume diffusion becomes important. The volume-surface incorporation resistance is about two times higher for {110} than for {111}rcub; faces.
Published Version
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