Abstract
The defects, whose structures are well known (for example, the complex of oxygen and vacancy-A center), were introduced in the p+n junction samples with diffused Pd by irradiation of electrons, and their interaction was promoted by annealing. The existance of the energy level related to Pd in Si can lower the annealing temperature of A centers, but does not affect its generating rate. The level ETC related to Pd is the complex of the interstitial Pd and vacancy.
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