Abstract
The poisoning effect of S on the dissociative adsorption of NO at 300 K on Rh(100) has been studied by work function measurements and photoemission spectroscopy using synchrotron radiation in the photon energy range hν=15–30 eV. Adsorption of S does not change the work function of Rh(100) but reduces the density of states at EF considerably. The 3p states of adsorbed S are at EB ∼5.3 eV. A sulfur overlayer of θs ∼0.08 ML inhibits the dissociative adsorption of NO and reduces drastically the amount of molecular adsorbed NO. The initial change in the work function with NO exposed to Rh(100) is Δφ/ΔL (NO)=270 meV/L (NO) with a saturation of Δφ=4.5 eV at ∼3 L NO. Sulfur covered Rh(100) with θs ∼0.08 ML reduces the initial change to Δφ/ΔL (NO)≂25 meV/L (NO) and saturates at ∼15 L NO with Δφ=80 meV.
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Schedule a callMore From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
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