Abstract
Much of the X-ray work on synchrotron-radiation beam lines is still done using ion chambers as detectors. Silicon PIN photodiodes offer considerable advantages over ion chambers for many applications. In addition to greater efficiency over a wide energy range (1–20 keV), they possess a flat configuration, large areas, an absence of bias requirements, high dynamic range, and compatability with ultrahigh vacuum. We have characterized the properties of several commercial PIN photodiodes at X-ray energies, have had diodes commercially produced which were specialized for use in synchrotron beam lines, and have produced new photodiode devices for synchrotron-radiation applications. We review the performance of these devices over extended periods of time in beam-line control and as detectors in experiments.
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