Abstract
The initial stages of the oxidation of the Si(100)2 x 1 surface was studied at room temperature by scanning tunneling microscopy (STM). We found that “type-C defects” which are believed to be two half-dimers have a strong preference for oxidation, compared with areas having no defects. Oxidized type-C defects appear to be depressions in both positive and negative sample bias voltages. We also found two oxidized sites having no defects. Single steps are quite stable against oxidation. The oxidation of the Si(100)2 x 1 surface is discussed in terms of these sites.
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