Abstract
In dry etching of borosilicate glass (BSG), the process gas reacts with the impurities of borosilicate glass and makes nonvolatile compound layer on the surface. This surface compound layer (SCL) significantly influences the etch rate. We examined the influences of SCL on the etch rate of Quartz and BSG, and discuss the mechanisms depending on the plasma parameters. In CF <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</inf> /Ar gas plasma etching, the high efficient etching could be achieved by the regulation of etching conditions. We analysis the etching mechanism depending on the plasma parameters and proposes the etching conditions for the improvement of etch rate.
Published Version
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