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Abstract
Abstract We report the investigations on the quantum dot size dependence of efficiency of a CdTe sensitized solar cell. With an additional layer of ZnS over the QD layer, the efficiency of solar cell was found to vary according to the size of the synthesized CdTe QDs. The presence of trap states due to the surface imperfections of the QDs as a result of the colloidal growth mechanism was also found to affect the overall efficiency of the solar cell. By coating a buffer layer of ZnS over the CdTe QD layer with the help of SILAR method, the efficiency enhanced up to 2.16% by decreasing the charge recombination rate between QDs and metal oxide layer.
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