Abstract

An unsteady state plasma is known to exist during the initial stage of the glow discharge decomposition of silane (SiH 4) gas. The properties of the i layer deposited in this unsteady state plasma and p-i-n stacked hydrogenated amorphous silicon solar cells having such an i layer were investigated. It was found that this layer had an undesirably wide optical band gap and low conductivity because of the large number of SiH 2 sites.

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