Abstract
The dependence of the infrared free carrier faraday rotation in multivalley semiconductors on valley energy splitting under uniaxial stress is investigated both theoretically and experimentally for a configuration in which the magnetic induction, radiation propagation and uniaxial stress are all parallel, to avoid birefringence. Theoretical expressions are obtained for cases relevant to the conduction bands of silicon and germanium with the uniaxial stress in the direction of one of the valleys, that is (100) and (111) strains respectively. It is shown that measurement of the influence of uniaxial stress on the infrared free carrier faraday effect allows both the longitudinal and transverse effective masses to be determined.
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