Abstract
AbstractThe influence of uniaxial stress in 〈111〉 direction on the free carrier contribution to the optical constants of multivalley semiconductors is considered according to the electron transfer model. Calculations are made of the resulting change in absorption and shift of the wavelength for minimum reflection. It is shown that these effects may be large and experimental observation of them provides a method of determining the effective mass and relaxation time parameters and their anisotropies. The possibility of constructing infrared modulators based on these phenomena is also examined.
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