Abstract
An investigation was made of Pt–Ir silicide films on (100)Si prepared by deposition of submonolayer thickness of Pt followed by 20–30 A of Ir. Submonolayer coverages of Pt induce a crystalline texture approaching an epitaxial relationship between the normally amorphous IrSi film and the crystalline (100) Si substrate. Films were prepared using e‐beam deposition, substrate temperature of 350 °C, and pressure at deposition ∼10−7 Torr. Rutherford backscattering, transmission electron microscopy, and Auger electron spectroscopy are used to characterize composition and thickness. Grain structure and crystallinity as well as film and substrate interface characteristics are functions of predeposition conditions. Simple diode measurements illustrate the effect of predeposited Pt on the emission coefficient and cutoff wavelength. Data suggests a model where the predeposited Pt acts as nucleation sites for crystal growth.
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Schedule a callMore From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
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