Abstract
Copper Tin Selenide Cu2SnSe3 (CTSe) alloy have been prepared from their elements with high purity. The composition and microstructure of this alloy was determined by energy dispersive x-ray spectroscope (EDS) and scanning electron microscope (SEM) respectively. CTSe thin film have been deposited onto well-cleaned glass substrates by flash thermal evaporation method with different thicknesses (500, 750 and 1000) nm.The as-deposited films were annealed in vacuum at 473 K for 1h.The structure of asdeposited and annealed films has been studied by X-ray diffraction technique, these studies revealed that the films crystallizes in the monoclinic phase. The crystallite size were determined from scherrer calculation method. Atomic force microscopy (AFM) showed that the grain size of the films was increases with increasing thickness ,but decrease with annealing temperature. The optical properties of thin films has been measured by UV-VIS spectrometer. The result showed that the energy band-gap of thin films decreased from 2.21 to 1.60 eV with increasing thickness and increased with annealing temperature.
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